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2SC2812 NPN Transistors(BJT) 55V 150mA/0.15A 180MHz 300~600 150mV/0.15V SOT-23/SC-59 marking L7 low-frequency amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
55V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
180MHz
直流电流增益hFE
DC Current Gain(hFE)
300~600
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsNPN Silicon epitaxial planer type Low frequency general purpose amplifier applications Features Mini package faciliates miniaturization in end products. High breakdown voltage
描述与应用NPN硅外延平面型 低频通用放大器应用 特点 迷你包以利于在终端产品的小型化。 高击穿电压
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