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2SC2884-O NPN Transistors(BJT) 35V 800mA/0.8A 120MHz 100~200 500mV/0.5V SOT-89/PW-Mini marking PO high gain radio amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 35V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
集电极连续输出电流IC Collector Current(IC) | 800mA/0.8A |
截止频率fT Transtion Frequency(fT) | 120MHz |
直流电流增益hFE DC Current Gain(hFE) | 100~200 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc Power Dissipation | 500mW/0.5W |
Description & Applications | NPN Silicon epitaxial Transistors Audio frequency Amplifier applications Features High DC current gain Suitable for output stage of 1W amplifier Small flat package Complementary to 2SA1204 |
描述与应用 | NPN硅外延晶体管 音频放大器应用 特点 高直流电流增益 适合1W放大器的输出级 小扁平封装 互补型2SA1204 |