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2SC3072-B NPN Transistors(BJT) 50V 5A 100MHz 200~330 1V TO-252/DPAK/PW-Mold marking C3072 medium power amplifier high gain
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC Collector Current(IC) | 5A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 200~330 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 1V |
耗散功率Pc Power Dissipation | 1W |
Description & Applications | NPN Silicon epitaxial Transistors Strobe flash applications Medium power amplifier applications High DC Current gain Low collector saturation voltage High power dissipation |
描述与应用 | NPN硅外延晶体管 闪光灯应用 中功率放大器应用 高直流电流增益 低集电极饱和电压 高功耗 |