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2SC3115 NPN Transistors(BJT) 180V 80mA 150MHz 60~120 700mV/0.7V SOT-23/SC-59 marking D26 high voltage switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
180V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
160V
集电极连续输出电流IC
Collector Current(IC)
80mA
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
60~120
管压降VCE(sat)
Collector-Emitter Saturation Voltage
700mV/0.7V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & Applications NPN Silicon epitaxial Transistors High-voltage switching, AF power Amp,100w output predriver applications Features Small-sized package permitting the 2SC3361-applied sets to be made small and slim. High breakdown voltage Small output capacitance Complementary to 2SA1257
描述与应用 NPN硅外延晶体管 高压开关,自动对焦放大器,100W输出功率前置驱动器应用 特点 小型包装允许2SC3361应用设置小型和超薄。 高击穿电压 小的输出电容 互补型2SA1257
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