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2SC3358 NPN Transistors(BJT) 20V 100mA/0.1A 7GHz 50~300 SOT86 marking high frequency low noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 7GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 250mW/0.25W |
| Description & Applications | NPN Silicon epitaxial Transistors HIgh frequency low noise amplifier Features Low noise and high gain High power gain |
| 描述与应用 | NPN硅外延晶体管 高频低噪声放大器 特点 低噪声和高增益 高功率增益 |
