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2SC3441 NPN Transistors(BJT) 55V 400mA/0.4A 150MHz 150~300 500mV/0.5V SOT-23/SC-59 marking DE high current drive application

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
55V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
400mA/0.4A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
150~300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsNPN Silicon epitaxial Transistors for general purpose high current drive applications Complementary to 2SA1366 Features High Vceo Excellent linearity of DC forward current gain High gain band width product High collector current Complementary to 2SA1366
描述与应用NPN硅外延晶体管 通用的高电流驱动应用 互补2SA1366 特点 高VCEO 出色的线性的直流正向电流增益 高增益带宽产品 高集电极电流 互补型2SA1366
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