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2SC3663 NPN Transistors(BJT) 15V 5mA 4GHz 50~250 SOT-23/SC-59 marking R62 high frequency low noise amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
8V
集电极连续输出电流IC
Collector Current(IC)
5mA
截止频率fT
Transtion Frequency(fT)
4GHz
直流电流增益hFE
DC Current Gain(hFE)
50~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
50mW
Description & ApplicationsNPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES • Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz • Ideal for battery drive of pagers, compact radio equipment,cordless phones, etc. • Gold electrode gives high reliability. • Mini mold package, ideal for hybrid ICs.
描述与应用NPN外延硅晶体管 高频低噪声放大 特点 •低电压,低电流,低噪声和高增益   NF= 3.0 dB(典型值)。 @ VCE= 1 V,IC=250 PA,F =1.0 GHz时   GA= 3.5 dB(典型值)。 @ VCE= 1 V,IC=250 PA,F =1.0 GHz时 •非常适于紧凑型无线电设备,无绳电话,等电池驱动的寻呼机, •金电极给出了很高的可靠性。 •迷你模具包装,混合集成电路的理想选择。
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