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2SC3904 NPN Transistors(BJT) 15V 65mA 8.5Ghz 120 SOT-23/SC-59 marking 3SR for2GHz band low noise amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 2.5V |
集电极连续输出电流IC Collector Current(IC) | 65mA |
截止频率fT Transtion Frequency(fT) | 8.5Ghz |
直流电流增益hFE DC Current Gain(hFE) | 120 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | Silicon NPN epitaxial planer type For 2GHz band low-noise amplification High transition frequency fT Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
描述与应用 | NPN硅外延平面型 用于2GHz频段低噪声放大 高转换频率FT 迷你型包装,通过带盒封装允许缩减设备规模和自动插入 |