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2sc4154 NPN Transistors(BJT) 50V 200mA/0.2A 200MHz 150~300 300mV/0.3V SOT-323/SC-70 marking LE low-frequency amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
6V |
集电极连续输出电流IC Collector Current(IC) |
200mA/0.2A |
截止频率fT Transtion Frequency(fT) |
200MHz |
直流电流增益hFE DC Current Gain(hFE) |
150~300 |
管压降VCE(sat) Collector-Emitter Saturation Voltage |
300mV/0.3V |
耗散功率Pc Power Dissipation |
150mW/0.15W |
Description & Applications | FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Small collector to emitter saturation voltage Excellent linearity of DC forward current gain Super mini package for easy mounting |
描述与应用 | 用于低频放大应用 硅NPN外延型 小集电极到发射极饱和电压 出色的线性的直流正向电流增益 易于安装的超小型封装 |