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2SC4210-Y NPN Transistors(BJT) 35V 800mA/0.8A 120MHz 160~320 500mV/0.5V SOT-23/SC-59 marking AY radiopower amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 35V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
集电极连续输出电流IC Collector Current(IC) | 800mA/0.8A |
截止频率fT Transtion Frequency(fT) | 120MHz |
直流电流增益hFE DC Current Gain(hFE) | 160~320 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) AUDIO POWER AMPLIFIER APPLICATIONS High DC Current Gain Complementary to 2SA1621 |
描述与应用 | 东芝晶体管的硅NPN外延式(PCT的进程) 音频功率放大器应用 高DC电流增益 与2SA1621互补 |