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2SC4446 NPN Transistors(BJT) 60V 150mA/0.15A 130MHz 200~400 150mV/0.15V SOT-323/SC-70/MCP marking H6 low-frequency amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
130MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsPNP/NPN Epitaxial planar Silicon transistor Low-Frequency General-Purpose Amp Applications Very small-siezed package permitting the 2SA1687/2SC4446-applied sets to be made small and slim
描述与应用PNP/ NPN外延平面硅晶体管 低频 通用放大器应用 非常小的封装允许2SA1687/2SC4446的应用设置制得微小和轻薄
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