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2SC4446 NPN Transistors(BJT) 60V 150mA/0.15A 130MHz 200~400 150mV/0.15V SOT-323/SC-70/MCP marking H6 low-frequency amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 150mA/0.15A |
截止频率fT Transtion Frequency(fT) | 130MHz |
直流电流增益hFE DC Current Gain(hFE) | 200~400 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 150mV/0.15V |
耗散功率Pc Power Dissipation | 150mW/0.15W |
Description & Applications | PNP/NPN Epitaxial planar Silicon transistor Low-Frequency General-Purpose Amp Applications Very small-siezed package permitting the 2SA1687/2SC4446-applied sets to be made small and slim |
描述与应用 | PNP/ NPN外延平面硅晶体管 低频 通用放大器应用 非常小的封装允许2SA1687/2SC4446的应用设置制得微小和轻薄 |