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2SC4541 NPN Transistors(BJT) 80V 3A 100MHz 120~400 500mV/0.5V SOT-89/PW-Mini marking KD power amplifier power supply switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
120~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & ApplicationsTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) power amplifier applications power switching applications Low Saturation Voltage High Speed Switching Time Small Flat Package Pc=1-2W
描述与应用东芝晶体管的硅NPN外延式(PCT的进程) 功率放大器应用 电源开关的应用 低饱和电压 高速开关时间 小型扁平封装 PC= 1-2W
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