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2SC4684 NPN Transistors(BJT) 50V 5A 150MHz 800~3200 <500mV/0.5V TO-252/DPAK/PW-Mold marking C4684 power amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 5A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 800~3200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | <500mV/0.5V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | Features •TOSHIBA Transistor Silicon NPN Epitaxial Type •Strobe Flash Applications Medium Power Amplifier Applications •High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) •Low collector saturation voltage : VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) •High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C) |
| 描述与应用 | 特点 •东芝晶体管的硅NPN外延型 •闪光灯应用中功率放大器应用 •高直流电流增益：HFE（1）=800〜3200（VCE=2 V，IC= 0.5 A） HFE（2）=250（VCE=2 V，IC= 4） •低集电极饱和电压VCE（星期六）=0.5 V（最大值）（IC= A，IB=40毫安） •高功耗PC =10 W（TC= 25°C），PC=1.0 W（大= 25°C） |
