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2SC4944-G NPN Transistors(BJT) 60V 150mA/0.15A 80MHz HEF=200~400 100mV/0.1V SOT-353/USV marking LG radio frequency general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & Applications Features • TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS) • AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER AMPLICATIONS • Small Package • High Voltage AND HIGH CURRENT • High HFE • EXCELLENT HFE LINEARITY • COMPLEMENTARY TO 2SA1873
描述与应用 特点 •晶体管的硅NPN外延式(PCT程序) •音频频率通用放大器AMPLICATIONS的 •小包装 •高电压和大电流 •高HFE •优秀的HFE线性 •互补2SA1873
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