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2SC5012 NPN Transistors(BJT) 20V 65mA 9Ghz 50~250 8V SOT-343 marking R37 high frequency low noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流IC Collector Current(IC) | 65mA |
| 截止频率fT Transtion Frequency(fT) | 9Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 8V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | Features • SILICON TRANSISTOR • HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation |
| 描述与应用 | 特点 •硅晶体管 •高频低噪声放大器NPN硅外延晶体管4针SUPER MINI MOLD •小包装 •高增益带宽积（FT =9 GHz的TYP。） •低噪声，高增益 •低电压操作 |
