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2SC5569 NPN Transistors(BJT) 80V 7A 330MHz 200~560 160mV/0.16V SOT-89/PCP marking FF DC/DCswitch fast switch
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 7A |
截止频率fT Transtion Frequency(fT) | 330MHz |
直流电流增益hFE DC Current Gain(hFE) | 200~560 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 160mV/0.16V |
耗散功率Pc Power Dissipation | 1.3W |
Description & Applications | NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Features · Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitales miniaturization in end products. · High allowable power dissipation. |
描述与应用 | NPN平面外延硅晶体管 DC/ DC转换器应用 应用 ·继电器驱动器,灯驱动器,电机驱动器,闪光灯。 特点 ·领养的FBET兆位过程。 ·高电流容量。 ·低集电极 - 发射极饱和电压。 ·高速开关。 ·超包facilitales年底小型化 产品。 ·高允许功耗。 |