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2SC5635-T22-1U NPN Transistors(BJT) 15V 50mA 8Ghz 50~250 SOT-323/SC-70 marking RU high-frequency amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA |
| 截止频率fT Transtion Frequency(fT) | 8Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 125mW/0.125W |
| Description & Applications | HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5635 is a super mini package resin sealed silicon NPN epitaxial transistor . It is designed for high frequency application. FEATURE ・Super mini package for easy mounting. ・High gain bandwidth product. fT=8.0GHz ・ High gain,low noise. ・Can operate at low voltage. APPLICATION For TV tuners,high frequency amplifier,celluar phone system. |
| 描述与应用 | 高频放大应用 硅NPN外延型 说明 三菱2SC5635是一个超小型封装树脂密封 硅NPN外延晶体管。它是专为高 高频应用。 特写 ·超小型封装，便于安装。 ·高增益带宽积。 FT =8.0GHz ·高增益，低噪声。 ·可在低电压下运行。 应用 电视调谐器，高频放大器，细胞电话 的系统。 |
