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2SC5635-T22-1U NPN Transistors(BJT) 15V 50mA 8Ghz 50~250 SOT-323/SC-70 marking RU high-frequency amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
6V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
8Ghz
直流电流增益hFE
DC Current Gain(hFE)
50~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
125mW/0.125W
Description & Applications HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5635 is a super mini package resin sealed silicon NPN epitaxial transistor . It is designed for high frequency application. FEATURE ・Super mini package for easy mounting. ・High gain bandwidth product. fT=8.0GHz ・ High gain,low noise. ・Can operate at low voltage. APPLICATION For TV tuners,high frequency amplifier,celluar phone system.
描述与应用高频放大应用 硅NPN外延型 说明 三菱2SC5635是一个超小型封装树脂密封 硅NPN外延晶体管。它是专为高 高频应用。 特写 ·超小型封装,便于安装。 ·高增益带宽积。          FT =8.0GHz ·高增益,低噪声。 ·可在低电压下运行。 应用 电视调谐器,高频放大器,细胞电话 的系统。
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