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2SC5868 NPN Transistors(BJT) 60V 500mA/0.5A 300MHz 120~270 75mV SOT-323/SC-70/UMT3 marking VSQ fast switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 截止频率fT Transtion Frequency(fT) | 300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~270 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 75mV |
| 耗散功率Pc Power Dissipation | 500mW/0.5W |
| Description & Applications | Medium power transistor Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. Applications Small signal low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor |
| 描述与应用 | 中等功率晶体管 特点 1）高速开关。 （TF：典型：80ns的在IC=500毫安的） 2）低饱和电压，通常 （IB大于10mA IC=100mA时典型值150mV的） 3）感性负载和放电功率强 电容负载。 应用 低频小信号放大器 高速开关 结构 NPN硅外延平面型晶体管 |
