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2SD1280-R NPN Transistors(BJT) 20V 1A 150MHz 130~210 500mV/0.5V SOT-89/SC-62 marking RR
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 130~210 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | Silicon NPN epitaxial planer type low-voltage type medium output power amplification Features * Low collector to emitter saturation voltage VCE(sat) *Satisfactory operation performances at high efficiency with the low-voltage power supply. *Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 | NPN硅外延平面型 低电压型介质输出功率放大 特点 *低集电极到发射极饱和电压VCE（SAT） *高效率令人满意的操作性能 低电压电源。 *小功率型封装，允许缩减设备 通过自动插入带包装盒包装 |
