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2SD1584-Z-T1 NPN Transistors(BJT) 60V 3A 120MHz 800~3200 250mV/0.25V TO-252/DPAK marking D1584

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
60V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
800~3200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
250mV/0.25V
耗散功率Pc
Power Dissipation
2W
Description & ApplicationsSMD type transistor NPN Silicon Epitaxial Transistor Features Low VCE(sat). High hFE.
描述与应用SMD型晶体管 NPN硅外延晶体管 特点 低VCE(饱和)。 HFE高。
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