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2SD1622S NPN Transistors(BJT) 60V 1A 150MHz 140~280 120mV/0.12V SOT-89/PCP marking DES low frequency power amplifier amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 140~280 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 120mV/0.12V |
| 耗散功率Pc Power Dissipation | 500mW/0.5W |
| Description & Applications | Silicon NPN epitaxial planer type darlington low frequency power amp amplification Features * very small size making it easy to provide high density hybird ics * adoption of FBET processes |
| 描述与应用 | NPN硅外延平面型达林顿 低频功率放大器放大 特点 *非常小的尺寸使其易于提供高密度摄录ICS *采用的FBET过程 |
