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2SD1760TLQ NPN Transistors(BJT) 60V 3A 90MHz 120~270 500mV/0.5V TO-252/CPT3 marking D1760

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
90MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
1W
Description & Applicationsfeatures * Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) structure Epitaxial planar type NPN silicon transistor
描述与应用特点 *低VCE(SAT)。 VCE(饱和)= 0.5V (IC / IB=2A/0.2A) 结构 外延平面型 NPN硅晶体管
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