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2SD1801T NPN Transistors(BJT) 60V 2A 150MHz 200~400 150mV/0.15V TO-252/DPAK marking D1801 high current switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 2A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 150mV/0.15V |
| 耗散功率Pc Power Dissipation | 800mW/0.8W |
| Description & Applications | PNP/NPN Epitaxial Planar Silicon Transistor High Current Switching Applications Applications · strobes ,relay drivers, voltage drivers,lamp drivers Features * large current capacity and wide ASO * Low collector to emitter saturation voltage VCE(sat) * fast switch speed * adoption of FBET，MBIT processes |
| 描述与应用 | PNP/ NPN平面外延硅晶体管 高电流开关应用 应用 ·闪光灯，继电器驱动电压驱动器，灯驱动器 特点 *大电流容量，广ASO *低集电极到发射极饱和电压VCE（SAT） *开关速度快 *采用的FBET，MBIT进程 |
