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2SD1821-S NPN Transistors(BJT) 150V 50mA 150MHz 185~330 1V SOT-323/SC-70 marking PS general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 150V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 150V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 185~330 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 1V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | *Silicon NPN epitaxial planer type *For high breakdown voltage low-frequency and low-noise amplification Features *High collector to emitter voltage VCEO. *Low noise voltage NV. |
| 描述与应用 | * NPN硅外延平面型 *对于高击穿电压的低频和低噪声 放大 特点 *高集电极到发射极电压VCEO。 *低噪声电压NV。 |
