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2SD2403 NPN Transistors(BJT) Vcbo= 80V Vceo=60V Ic= 3A ft=130MHz hfe=200~400 Vce=150mV/0.15V SOT-89 marking GZ low frequency power amplifier medium speed switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
60V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
130MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
2W
Description & Applications NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SB1572
描述与应用 NPN硅外延晶体管低频功率放大器和中速切换 特点 •高电流电容 •低集电极饱和电压 •互补晶体管2SB1572
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