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2SD874A NPN Transistors(BJT) 60V 1A 200MHz 85~340 200mV/0.2V SOT-89/SC-62 marking Y low frequency output amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 1A |
截止频率fT Transtion Frequency(fT) | 200MHz |
直流电流增益hFE DC Current Gain(hFE) | 85~340 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 200mV/0.2V |
耗散功率Pc Power Dissipation | 1W |
Description & Applications | Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A Features Large collector power dissipation PC. High collector to emitter voltage VCE. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
描述与应用 | PNP硅外延平面型 对于低频输出放大 2SD874互补和2SD874A 特点 大集电极功耗PC。 高集电极发射极电压VCE。 迷你功率型封装,让瘦身的设备 通过自动插入带包装盒包装。 |