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2SJ106-GR JFET P-Channel 50 V －2.6~－6.5mA SOT-23 marking VG high breakdown voltage/constant current/impedance converter
| 最大源漏极电压Vds Drain-Source Voltage | 50 V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | 50 V |
| 漏极电流(Vgs=0V)IDSS Drain Current | －2.6~－6.5mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | 0.3~6.0V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ106 AUDIO FREQUENCY AMPLIFIER APPLICATIONS ANALOG SWITCH APPLICATIONS CONSTANT CURRENT APPLICATIONS IMPEDANCE CONVERTER APPLICATIONS High Breakdown Voltage : VGDS=50V High Input Impedance : IGSS=1.0nA(Max.)(VGS=30V) Low RDS(ON) : RDS(ON)=270Ω(Typ.) (IDSS=-5mA) Small Package |
| 描述与应用 | 东芝场效应晶体管的硅P沟道结型 2SJ106 音频放大器应用 模拟开关应用 恒定电流的应用 阻抗转换器应用 高击穿电压：VGDS= 50V 高输入阻抗：IGSS=1.0nA（最大）（VGS=30V） 低RDS（ON） RDS（ON）=270Ω（典型值）（IDSS=-5mA） 小包装 |
