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2SJ163-R JFET P-Channel 65 V －2.5~－6.0mA SOT-23 marking 4MR low on-resistance/low noise
| 最大源漏极电压Vds Drain-Source Voltage | 65 V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | 65 V |
| 漏极电流(Vgs=0V)IDSS Drain Current | －2.5~－6.0mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | 1.5~3.5V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Features Low ON-resistance Low-noise characteristics |
| 描述与应用 | 2SJ163 硅P沟道结型场效应管 对于一般的切换 互补2SK1103 特点 低导通电阻 低噪声特性 |
