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2SJ212 MOSFET P-Channel -60V 500mA 0.8ohm SOT-89 marking PO high-speed switch Directly driven by ICs having a 5V power supply
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -500mA/-0.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.8Ω @-500mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.0--3.0V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance |
| 描述与应用 | MOS场效应晶体管 P沟道MOS FET用于开关 直接驱动5V电源IC 具有低导通电阻 |
