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2SJ212 MOSFET P-Channel -60V 500mA 0.8ohm SOT-89 marking PO high-speed switch Directly driven by ICs having a 5V power supply

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-500mA/-0.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.8Ω @-500mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--3.0V
耗散功率Pd
Power Dissipation
2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance
描述与应用MOS场效应晶体管 P沟道MOS FET用于开关 直接驱动5V电源IC 具有低导通电阻
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