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2SJ325-Z-E1 MOSFET P-Channel -60V 4A 0.08ohm SOT-252 marking J325 high-speed switch industrial use
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.08Ω @-2A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.0--2.0V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | MOS FIELD EFFECT POWER TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE low on-state resistance low Ciss built-in G-S gate protecion diode |
| 描述与应用 | MOS场效应功率晶体管 开关 P沟道功率MOS FET 工业用途 低通-态电阻 Ciss低 内置G-S门的法律保护二极管 |
