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2SJ361RYTR MOSFET P-Channel -20V -2A 0.28ohm SOT-89 marking RY high-speedpower switch
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.28Ω @1A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.5--1.5V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source |
| 描述与应用 | 高速功率开关 特性 •低导通电阻 •高速开关 •低驱动电流 •2.5 V门驱动装置可以驱动从3 V源 |
