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2SJ361RYTR MOSFET P-Channel -20V -2A 0.28ohm SOT-89 marking RY high-speedpower switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.28Ω @1A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.5--1.5V
耗散功率Pd
Power Dissipation
1W
Description & ApplicationsHigh speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source
描述与应用高速功率开关 特性 •低导通电阻 •高速开关 •低驱动电流 •2.5 V门驱动装置可以驱动从3 V源
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