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2SJ401 MOSFET P-Channel -60V -20A 0.033ohm SOT-262 marking J401 high-speed switch low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -20A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.033Ω @10A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.8--2.0V |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | 4 V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.) Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) |
| 描述与应用 | 4 V栅极驱动 低漏源导通电阻RDS（ON）= 33mΩ（典型值） 高正向转移导纳：| YFS|=20 S（典型值） 低漏电流：IDSS=-100μA（最大值）（VDS=-60V） 增强模式：VTH =-0.8〜-2.0 V（VDS= -10 V，ID=-1毫安） |
