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2SJ576APTL-E MOSFET P-Channel -30V 100mA/0.1A 0.28ohm SOT-323 marking AP low on-resistance ultra high-speed switch 4V drive
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.28Ω @-50mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.3--2.3V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | Features •Low on-resistance RDS=2.8 Ω typ. (VGS = -10 V , ID = -50 mA)RDS=5.7 Ω typ. (VGS = -4 V , ID = -50 mA) •4 V gate drive device. •Small package (CMPAK) |
| 描述与应用 | •低导通电阻 RDS=2.8Ω（典型值）。 （VGS= -10V， ID= -50毫安）RDS=5.7Ω（典型值）（VGS=-4 V，ID=-50毫安） •4 V栅极驱动装置。 •采用小型封装（CMPAK）， |
