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2SJ648 MOSFET P-Channel -20V 400mA 1.17ohm SOT-523 marking H1 low on-resistance ultra high-speed switch 2.5V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-0.4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
1.17Ω @-2A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.8--1.8V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsFEATURES •2.5 V drive available •Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V,ID−0.2A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A) DS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
描述与应用•2.5 V驱动器可用 •低通态电阻 的RDS(on)1 =1.45Ω最大。 (VGS= -4.5 V,ID-0.2A) 的RDS(on)2 =1.55Ω最大。 (VGS= -4.0 V,ID= -0.2) DS(上)3=2.98Ω最大。 (VGS= -2.5 V,ID= -0.15)
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