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2SK1113 MOSFET N-Channel TO-252/D-PAK marking

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Product description
最大源漏极电压Vds Drain-Source Voltage120V
最大栅源极电压Vgs(±) Gate-Source Voltage±20V
最大漏极电流Id Drain Current3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.33Ω~0.42Ω@Vgs=10v,ID=1.5A
开启电压Vgs(th) Gate-Source Threshold Voltage0.8V~2V@ Vds=10v,Id=1mA
耗散功率Pd Power Dissipation20W
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