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2SK1590 MOSFET N-Channel 60V 200mA/0.2A SOT-23/SC-59 marking G16 FET for switching/low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current200mA/0.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance2.4Ω/Ohm @10mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-1.8V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsN-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power source Not necessary to consider driving current because of its high input impedance Has high voltage and high-speed switching characteristics
描述与应用N沟道MOS FET的切换 直接被带有5V电源的IC驱动 不必考虑驱动电流,因为它的高输入阻抗 具有高电压和高速开关特性
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