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2SK1961 JFET N-Channel 15v 40~75mA SOT-252 marking K1961 high frequency low noise amplifier
最大源漏极电压Vds Drain-Source Voltage | 15v |
栅源极击穿电压V(BR)GS Gate-Source Voltage | -15v |
漏极电流(Vgs=0V)IDSS Drain Current | 40~75ma |
关断电压Vgs(off) Gate-Source Cut-off Voltage | -1.2~-4.5v |
耗散功率Pd Power Dissipation | 500mW/0.5W |
Description & Applications | Silicon N-Channel Junction FET Applications High-frequency low-noise amp applications Features Adoption of FBET process Very low noise figure |
描述与应用 | 硅N沟道结型场效应晶体管应用 高频低噪声放大器的应用 特点 采纳FBET过程 非常低的噪声图 |