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2SK2099 MOSFET N-Channel 250V 6A TO-252/D-PAK marking fast switch/low on-resistance/no secondary breakdown/low drive power/high voltage
| 最大源漏极电压Vds Drain-Source Voltage | 250V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.6Ω/Ohm @3A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.5-3.5V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | N-CHANNEL MOS FET High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof |
| 描述与应用 | N沟道MOS-FET 特性 N沟道MOS FET 高速开关 低导通电阻 无二次击穿 低驱动功率 高电压 VGS=±30V保证 防雪崩 |
