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2SK2151 MOSFET N-Channel 20V 1A SOT-89 marking KI low on-resistance/high-speed switch low voltage drive
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 15V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.35Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 1.3W |
| Description & Applications | Features N-Channel MOS silicon FET Very high-speed switching applications Low ON resistance Very high-speed switching Low-voltage drive |
| 描述与应用 | 特性 N沟道硅MOS FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动 |
