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2SK2231 MOSFET N-Channel 60V 5A TO-252/D-PAK marking K2231 4V gate drive/low Rds/High forward transfer admittance/low leakage current

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Batches(PCS):
$0.252
≤99
$0.227
≤499
$0.189
≤999
$0.164
≤1999
$0.151
FCL

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.12Ω/Ohm @2.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-2.0V
耗散功率Pd Power Dissipation20W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2−π−MOSV) Chopper Regulator, DC−DC Converter and Motor Drive Applications Features Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement−mode
描述与应用东芝场效应晶体管的硅N沟道MOS型(L 2-π-MOSV) 斩波稳压器,DC-DC转换器和电机驱动应用 特性 硅N沟道MOS型 斩波稳压器,DC-DC转换器和电机驱动应用 4 V栅极驱动 低漏源导通电阻 高正向转移导纳 低漏电流 增强型
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