Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SK2376 MOSFET N-Channel 60V 45A TO-263 marking K2376 chopper regulator/DC-DC converter/motor drive 4V gate drive
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 45A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 13Ω/Ohm @25A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.0V |
| 耗散功率Pd Power Dissipation | 100W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2−π−MOSV) Chopper Regulator, DC−DC Converter and Motor Drive Applications Features Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) Enhancement−mode |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS型（L 2-π-MOSV） 斩波稳压器，DC-DC转换器和电机驱动应用 特性 硅N沟道MOS型 斩波稳压器，DC-DC转换器和电机驱动 应用 4 V栅极驱动 低漏源导通电阻RDS（ON）= 13mΩ（典型值） 高正向转移导纳：| YFS|=40 S（典型值） 低漏电流：IDSS=100μA（最大值）（VDS=60 V） 增强型 |
