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2SK2414-Z MOSFET N-Channel 60V 10A TO-252/D-PAK marking K2414 low on-resistance/High Avalanche Capability Ratings
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 10A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.052Ω/Ohm @5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.DUSTRIAL USE Features MOS FIELD EFFECT TRANSISTOR Low On-Resistance RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A) • Low Ciss Ciss = 840 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings |
| 描述与应用 | MOS场效应晶体管 SWITCHING N-CHANNEL POWER的MOS FET INDESCRIPTION 2SK2414 N沟道MOS场效应晶体管设计 为高电压开关applications.DUSTRIAL使用 特性 MOS场效应晶体管 低导通电阻 的RDS（on）1 =70mΩ最大。 （@ VGS=10V，ID= 5.0 A） 的RDS（on）2 =95mΩ最大。 （@ VGS= 4 V，ID= 5.0 A） •低连续供墨系统连续供墨系统= 840 PF TYP。 •内置的G-S栅极保护二极管 •高雪崩能力额定值 |
