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2SK2414-Z MOSFET N-Channel 60V 10A TO-252/D-PAK marking K2414 low on-resistance/High Avalanche Capability Ratings

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current10A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.052Ω/Ohm @5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2V
耗散功率Pd Power Dissipation1W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.DUSTRIAL USE Features MOS FIELD EFFECT TRANSISTOR Low On-Resistance RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A) • Low Ciss Ciss = 840 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings
描述与应用MOS场效应晶体管 SWITCHING N-CHANNEL POWER的MOS FET INDESCRIPTION 2SK2414 N沟道MOS场效应晶体管设计 为高电压开关applications.DUSTRIAL使用 特性 MOS场效应晶体管 低导通电阻 的RDS(on)1 =70mΩ最大。 (@ VGS=10V,ID= 5.0 A) 的RDS(on)2 =95mΩ最大。 (@ VGS= 4 V,ID= 5.0 A) •低连续供墨系统连续供墨系统= 840 PF TYP。 •内置的G-S栅极保护二极管 •高雪崩能力额定值
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