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2SK2596 MOSFET N-Channel 17V 400mA/0.4A SOT-89 marking BX high output power/high gain/high efficiency

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Product description
最大源漏极电压Vds Drain-Source Voltage17V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current400mA/0.4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage0.4-1.1V
耗散功率Pd Power Dissipation3W
Description & ApplicationsSilicon N-Channel MOS FET UHF Power Amplifier Features Silicon N-Channel MOS FET UHF Power Amplifier High power output, High gain, High efficiency Compact package capable of surface mounting
描述与应用硅结场效应晶体管(小信号) 硅N沟道结型场效应管 对于开关的低频放大 特性 硅N沟道MOS FET UHF功率放大器 高输出功率,高增益,高效率 紧凑封装,能够表面安装
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