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2SK2596 MOSFET N-Channel 17V 400mA/0.4A SOT-89 marking BX high output power/high gain/high efficiency
| 最大源漏极电压Vds Drain-Source Voltage | 17V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 400mA/0.4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.1V |
| 耗散功率Pd Power Dissipation | 3W |
| Description & Applications | Silicon N-Channel MOS FET UHF Power Amplifier Features Silicon N-Channel MOS FET UHF Power Amplifier High power output, High gain, High efficiency Compact package capable of surface mounting |
| 描述与应用 | 硅结场效应晶体管（小信号） 硅N沟道结型场效应管 对于开关的低频放大 特性 硅N沟道MOS FET UHF功率放大器 高输出功率，高增益，高效率 紧凑封装，能够表面安装 |
