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2SK3210 MOSFET N-Channel 150V 3A TO-263 marking K3210 low on-resistance/high-speed switch
最大源漏极电压Vds Drain-Source Voltage | 150V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 30A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.04Ω/Ohm @15A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1-2.5V |
耗散功率Pd Power Dissipation | 100W |
Description & Applications | Silicon N Channel MOS FET High Speed Power Switching Features Silicon N Channel MOS FET High Speed Power Switching Low on-resistance RDS = 40 m? typ High speed switching 4 V gate drive device can be driven from 5 V source |
描述与应用 | 硅N沟道MOS FET 高速电源开关 特性 硅N沟道MOS FET 高速电源开关 低导通电阻 RDS=40MΩ(典型值) 高速开关 4 V栅极驱动器可驱动从5 V电源 |