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2SK3349DNTR MOSFET N-Channel 20V 50mA SOT-523/SMPAK marking DN

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current50mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance2.8Ω/Ohm @25mA,4V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-1.8V
耗散功率Pd Power Dissipation100mW/0.1W
Description & ApplicationsSilicon N Channel MOS FET High Speed Switching Features Silicon N Channel MOS FET High Speed Switching Low on-resistance RDS= 1.6 typ (VGS= 4 V , ID = 50 mA) RDS= 2.2 typ(VGS= 2.5 V , ID = 50 mA) 2.5 V gate drive device Small package (CMPAK)
描述与应用硅N沟道MOS场效应管的高速开关 特性 硅N沟道MOS FET 高速开关 低导通电阻 RDS=1.6典型值(VGS=4 V,ID=50毫安) RDS=2.2(典型值)(VGS= 2.5V,ID= 50毫安) 2.5 V门驱动装置 小型封装(CMPAK)
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