Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SK3475 MOSFET N-Channel 20V 1A SOT-89/PW-Mini marking WB VHF and UHF band amplifier
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 5V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.9-2.9V |
| 耗散功率Pd Power Dissipation | 3W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications Features Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications Output power: PO = 630 mW (min) Gain: GP = 14.9dB (min) Drain efficiency: ηD = 45% (min) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 VHF和UHF频段放大器的应用 特性 硅N沟道MOS型 VHF和UHF频段放大器的应用 输出功率：PO= 630毫瓦（最小） 增益：GP=14.9分贝（分） 漏极效率：ηD=45％（分钟） |
