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2SK368-gr JFET N-Channel 100v 2.6~6.5mA SOT-23 marking KAG radio and high voltage amplifier
| 最大源漏极电压Vds Drain-Source Voltage | 100v |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -100v |
| 漏极电流(Vgs=0V)IDSS Drain Current | 2.6~6.5ma |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -0.4~-3.5v |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | •Silicon N-Channel Junction FET Audio Frequency and High Voltage Amplifier Applications Constant Current Applications • High breakdown voltage: VGDS = −100 V (min) • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V) • Small package |
| 描述与应用 | •硅N沟道结型场效应管 音频频率和高电压放大器的应用 恒流应用 •高击穿，电压：VGDS= -100 V（分钟） •高输入阻抗：IGSS= -1.0 NA（最大值）（VGS=-80 V） •小型封装 |
