Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SK536 MOSFET N-Channel 50V 100mA/0.1A SOT-23/SC-59 marking BJ low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 20Ω/Ohm @10A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.3-1.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | N-CHANNEL Enhancement MOS Silicon FET Analog Switching application Features N-Channel Enhancement MOS Silicon FET Analog Switch Application Large Yfs Small ON resistance |
| 描述与应用 | N沟道增强型MOS FET硅 模拟开关应用 特性 N沟道增强MOS FET硅 模拟开关应用 大Yfs 小通态电阻 |
