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2SK739-Z-T1 MOSFET N-Channel 30V 2A TO-252/D-PAK marking K739 no secondary breakdown

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.17Ω/Ohm @1A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2.5V
耗散功率Pd Power Dissipation2W
Description & ApplicationsFAST SWITCHING Features Fast switching Silicon N-Channel POWER MOS FET Industrial use Suitable for switching power supplies,actuator controls,and pulse circuits Low Ciss No second breakdown 4 V gate drive-logical level Designed for hybrid integrated circuit
描述与应用快速切换 特性 快速开关 硅N沟道功率MOS FET 工业用 适用于开关电源,执行器控制装置和脉冲电路 Ciss低 无二次击穿 4栅极驱动电压逻辑电平 专为混合集成电路
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