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2SK880-Y JFET N-Channel 50v 1.2~3mA SOT-323 marking XY radio frequency low noise amplifier

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Product description
最大源漏极电压Vds
Drain-Source Voltage
50v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-50v
漏极电流(Vgs=0V)IDSS
Drain Current
1.2~3ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.2~-1.5v
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & Applications•Field Effect Transistor Silicon N Channel Junction Type •Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA (max) at VGS = −30 V
描述与应用•场效应晶体管的硅N沟道结型 •音频频率低噪声放大器的应用 •高| YFS|:| YFS|= 15毫秒(典型值),在VDS=10V,VGS=0 •高击穿电压:VGDS=-50 V •低噪音:NF=1.0分贝(典型值)   在VDS= 10 V,ID=0.5毫安,F=1千赫,RG=1kΩ的 •高输入阻抗:IGSS= -1娜在VGS=-30 V(最大值)
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